Direct determination of the free-carrier injection density, the free-carrier absorption, and the recombination factors in double heterostructure diodes by optical phase measurements. Part III
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1935741
Reference39 articles.
1. Chapter 2 Minority-Carrier Lifetime in III–V Semiconductors
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3. Minority carrier lifetime and luminescence efficiency of 1.3 µm InGaAsP-InP double heterostructure layers
4. Optical Properties of n‐Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence Measurements
5. Variation of minority‐carrier diffusion length with carrier concentration in GaAs liquid‐phase epitaxial layers
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