Ion motion above a biased wafer in a plasma etching reactor

Abstract

The behavior of ions in the plasma is an essential component in the process of industrial etching. We studied the motions and energy distribution of argon ions in a inductively coupled plasma (ICP) etching tool, by the method of laser induced fluorescence (LIF). The silicon wafer clamped to a chuck at the bottom of the chamber was biased with a 1 MHz 1–1.2 kV peak-to-peak sinusoidal voltage. The plasma is formed with a 2 MHz ICP coil pulsed at 10 Hz. Sheath thickness was measured at different phases of the bias waveform. The experiment also compared the ion motions with and without wafer bias, as well as different switch-on time of wafer bias. For all cases, ion energy distribution functions and the two-dimensional flow pattern were studied near the center and edge of the wafer. Significant vortex flows were observed near the wafer edge. Experiments in which the wafer was biased in the plasma afterglow resulted in a narrow distribution of ion energy close to the bias voltage at the vicinity of the wafer, and the ion incident angle on the wafer was the smallest. The results were compared to simulations using the Hybrid Plasma Equipment Model code.