Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2∕SiO2 stack as the tunnel dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1864254
Reference18 articles.
1. Single Electron Memory Devices Based on Plasma-Derived Silicon Nanocrystals
2. Memory and negative photoconductivity effects of Ge nanocrystals embedded in ZrO2/Al2O3 gate dielectrics
3. Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam evaporated germanium layer
4. Electron charging and discharging in amorphous silicon quantum dots embedded in silicon nitride
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1. Non-volatile memory and negative photoconductivity in a metal-insulator-semiconductor diode with embedded Co nanoparticles;Journal of Applied Physics;2018-06-14
2. A Review on Ge Nanocrystals Embedded in SiO2and High-k Dielectrics;physica status solidi (a);2018-01-31
3. How morphology determines the charge storage properties of Ge nanocrystals in HfO 2;Scripta Materialia;2016-03
4. Ge nanocrystals in HfO2/SiN dielectric stacks by low energy ion beam synthesis;Thin Solid Films;2013-09
5. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application;Nanoscale Research Letters;2011-02-28
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