Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition

Published:2011-07-04 Issue:1 Volume:99 Page:011109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Yong,Ryou Jae-Hyun,Dupuis Russell D.,Zuo Daniel,Kesler Benjamin,Chuang Shun-Lien,Hu Hefei,Kim Kyou-Hyun,Ting Lu Yen,Hsieh K. C.,Zuo Jian-Min

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3609240

Reference19 articles.

1. Proposal for strained type II superlattice infrared detectors

2. Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

3. Type II superlattices for infrared detectors and devices

4. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb

5. High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range

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1. Interfacial characterization of InAs/GaSb superlattices grown by MOCVD at different growth temperatures;Micro and Nanostructures;2023-08

2. Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook;Journal of Physics D: Applied Physics;2023-07-27

3. Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices;ACS Applied Materials & Interfaces;2023-02-01

4. Raman Spectroscopy Studies of III – V Type II Superlattices;Spectroscopy and Characterization of Nanomaterials and Novel Materials;2022-03-25

5. High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD;Photonics;2021-12-10

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