Barrier height enhancement of triangular barrier diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336719
Reference18 articles.
1. Unified analysis of the bulk unipolar diode
2. A majority‐carrier camel diode
3. Planar-doped barriers in GaAs by molecular beam epitaxy
4. Theory of triangular-barrier bulk unipolar diodes including minority-carrier effects
5. Coupled-line circuit with adjustable input conductance
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Tunneling in planar‐doped barrier diodes;Journal of Applied Physics;1990-09-15
2. A modified Norde function for the measurement of the series resistance and the voltage‐dependent barrier height of triangular barrier diodes;Journal of Applied Physics;1989-04
3. Control of the barrier height of triangular‐barrier diodes by doping their intrinsic layers;Journal of Applied Physics;1988-02-15
4. Determination of barrier height and technological parameters of triangular barrier diodes;Physica Status Solidi (a);1987-04-16
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