The effect of Te dopant on the optical and electrical properties of high-resistivity AlSb crystals-Reference-Cited by-同舟云学术

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The effect of Te dopant on the optical and electrical properties of high-resistivity AlSb crystals

Published:2020-07-14 Issue:2 Volume:128 Page:025702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yin Ziang¹²,Jie Wanqi¹²,Zhang Xianggang¹²,Wang Tao¹²^ORCID

Affiliation:

1. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China

2. Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, China

Funder

the National Key R&D Program of China

Research Fund of the State Key Laboratory of Solidification Processin

Fundamental Research Funds for the Central Universities

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0013811

Reference39 articles.

1. AlSb intermetallic semiconductor compound formation by solid state reaction after partial amorphization induced by mechanical alloying

2. Antimonide-based compound semiconductors for electronic devices: A review

3. Effect of Temperature on Photovoltaic Solar Energy Conversion

4. What Can Be Expected from High-Z Semiconductor Detectors?

5. ALSB as a High-Energy Photon Detector

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