Thermoelectric properties of p-type half-Heusler compound HfPtSn and improvement for high-performance by Ir and Co additions-Reference-Cited by-同舟云学术

Thermoelectric properties of p-type half-Heusler compound HfPtSn and improvement for high-performance by Ir and Co additions

Published:2006-10-23 Issue:17 Volume:89 Page:172110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kimura Yoshisato,Zama Akihisa

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2364721

Reference20 articles.

1. Gap at the Fermi level in the intermetallic vacancy system RBiSn(R=Ti,Zr,Hf)

2. The effects of quaternary additions on thermoelectric properties of TiNiSn-based half-heusler alloys

3. S.W. Kim, Y. Kimura, and Y. Mishima, Proceedings of TMS Symposium on Advanced Materials for Energy Conversion II (TMS, Warrendale, PA, 2004), p. 377.

4. Y. Hayashi, S.W. Kim, Y. Kimura, and Y. Mishima, Prodeedings of TMS Symposium on Advanced Materials for Energy Conversion II (TMS, Warrendale, PA, 2004), p. 367.

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