Identification of rhenium donors and sulfur vacancy acceptors in layered MoS2 bulk samples
Author:
Affiliation:
1. Departamento de Física, Universidade Federal de Minas Gerais, CP 702, 30.123-970 Belo Horizonte, MG, Brazil
Funder
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Fundação de Amparo à Pesquisa do Estado de Minas Gerais (FAPEMIG)
Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4954017
Reference39 articles.
1. Single-layer MoS2 transistors
2. Single-Layer MoS2 Phototransistors
3. The valley Hall effect in MoS 2 transistors
4. Layered memristive and memcapacitive switches for printable electronics
5. Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
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