SIMULTANEOUS INDIUM AND CADMIUM DIFFUSION IN GALLIUM ARSENIDE
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1753965
Reference5 articles.
1. Diffusion of Cadmium into Gallium Arsenide
2. Characteristics of the {111}Surfaces of the III–V Intermetallic Compounds
3. Diffusion of Cadmium and Zinc in Gallium Arsenide
4. Diffusion in homöopolaren Halbleitern
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1. A one-dimensional model to predict the growth conditions of InxGa1−xAs alloy crystals grown by the traveling liquidus-zone method;Journal of Crystal Growth;2003-10
2. General behavior of the In/GaAs couple under prolonged sintering;Applied Physics A Materials Science & Processing;1995-03
3. Stoichiometry of III–V compounds;Materials Science and Engineering: R: Reports;1994-09
4. TEM Study of MOCVD Grown InSb/GaAs Heterostructures with and without TMIn Predeposited Layers;MRS Proceedings;1994
5. Iso‐electronic impurity‐induced disordering: AlxGa1−xAs‐GaAs/In;Applied Physics Letters;1991-11-25
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