Tunable resonance Raman scattering of quantum dots in a nonlinear excitation regime

Author:

Zhang Butian12ORCID,Wang Kexin12ORCID,Song Xinxin12ORCID,Zhang Youwei12ORCID,Chen Xue-Wen2ORCID,Wang Shun12ORCID

Affiliation:

1. MOE Key Laboratory of Fundamental Physical Quantities Measurement and Hubei Key Laboratory of Gravitation and Quantum Physics, Huazhong University of Science and Technology, PGMF 1 , Wuhan, People’s Republic of China

2. School of Physics, Huazhong University of Science and Technology 2 , Wuhan 430074, People's Republic of China

Abstract

Controllable tuning of electron–phonon coupling strength and excited state dynamics is important for the understanding of resonance Raman scattering in low-dimensional semiconductors. Here, we report a significant and reversible field-induced modulation in absolute resonance Raman intensity of quantum dots using ionic liquid gating. Meanwhile, a potential-dependent nonlinear relationship is present between Raman intensity and excitation power density. By exploring the parameter space within a time domain model, we find that the Raman intensity variation is mainly determined by the homogeneous linewidth. We further propose that the Fermi level positions and exciton species play key roles in the excited state decay rates.

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

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