Oval defects in Ga1−xAlxAs molecular beam epitaxy layers: A Raman scattering and photoluminescence combined study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99593
Reference8 articles.
1. Classification and origins of GaAs oval defects grown by molecular beam epitaxy
2. Surface morphologies of GaAs layers grown by arsenic-pressure-controlled molecular beam epitaxy
3. Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs
4. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
5. Optical properties of AlxGa1−xAs
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1. Multiple quantum well PIN optoelectronic devices and a method of restoring failed device characteristics;Microelectronics Reliability;2002-07
2. A Raman study of GaAsN, GaInAsN layers on bevelled samples;Materials Science and Engineering: B;2002-04
3. MicroRaman and phase stepping microscopy analysis of growth defects in GaAs/GaAs epilayers;Materials Science and Technology;1998-12
4. Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxy;Applied Physics Letters;1998-10-05
5. Superlattice effects induced by atomic ordering onGaxIn1−xP Raman modes;Physical Review B;1996-07-15
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