Low‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94754
Reference14 articles.
1. Computer Simulation in Silicon Epitaxy
2. Silicon molecular beam epitaxy with simultaneous ion implant doping
3. Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 K
4. Epitaxial growth of silicon from SiH4 in the temperature range 800–1150°C
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1. Thin Film Deposition;Fundamentals of Semiconductor Processing Technology;1995
2. Growth of epitaxial germanium-silicon heterostructures by chemical vapour deposition;Materials Science and Engineering: B;1993-02
3. Delta doping in silicon;Critical Reviews in Solid State and Materials Sciences;1993-01
4. Low‐Temperature Si Epitaxial Growth by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition;Journal of The Electrochemical Society;1992-07-01
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