Comparison of the room temperature 1.53 μm Er photoluminescence from flash lamp and furnace annealed Er-doped Ge-rich SiO2 layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3437652
Reference13 articles.
1. MOS Light Emitting Devices Based on Rare-Earth Ion Implantation
2. Correlation between the microstructure and electroluminescence properties of Er-doped metal-oxide semiconductor structures
3. Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals
4. Influence of annealing on the Er luminescence in Si-rich SiO2 layers coimplanted with Er ions
5. Excitable Er fraction and quenching phenomena in Er-dopedSiO2layers containing Si nanoclusters
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1. Er3+-catalyzed interdiffusion of elements across the interface between Bi2O3 film and SiO2 substrate resulting in host-material-specific photoluminescence spectra of Er3+;Journal of Alloys and Compounds;2022-05
2. Semiconductor Applications;Flash Lamp Annealing;2019
3. A review of thermal processing in the subsecond range: semiconductors and beyond;Semiconductor Science and Technology;2016-09-01
4. A comparative study of 1.5μm photoluminescence from (Er, Si) and (Er, Ge) co-sputtered with Al2O3 on Si;Journal of Alloys and Compounds;2014-03
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