Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime-Reference-Cited by-同舟云学术

Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime

Published:2020-12-14 Issue:22 Volume:128 Page:224303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rasulova G. K.¹^ORCID,Pentin I. V.²^ORCID,Vakhtomin Yu. B.²^ORCID,Smirnov K. V.²^ORCID,Khabibullin R. A.³⁴^ORCID,Klimov E. A.³^ORCID,Klochkov A. N.³^ORCID,Goltsman G. N.²^ORCID

Affiliation:

1. P.N. Lebedev Physical Institute of Russian Academy of Sciences, 119991 Moscow, Russia

2. Moscow State Pedagogical University, 119435 Moscow, Russia

3. V.G. Mokerov Institute of Ultra High Frequency Electronics of Russian Academy of Sciences, 117950 Moscow, Russia

4. Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia

Funder

Russian Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0022052

Reference28 articles.

1. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

2. One THz harmonic oscillation of resonant tunneling diodes

3. Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode

4. Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

5. Operation of resonant-tunneling diodes with strong back injection from the collector at frequencies up to 1.46 THz

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1. Spacer layers’ thickness impact on the resonant-tunneling diode’s and frequency mixer’s operational parameters;E3S Web of Conferences;2024

2. TWO-PHOTON PULSED TERAHERTZ EMISSION FROM GaAs/AlAs DOUBLE-BARRIER RESONANT TUNNELING DIODE BIASED INTO CURRENT SELF-OSCILLATION REGIME;SGEM International Multidisciplinary Scientific GeoConference� EXPO Proceedings;2023-10-01

3. Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel;Sensors;2023-09-19

4. Forming a Portion of Negative Differential Conductivity in the I–V Characteristic of Resonant-Tunneling Structures;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2022-02

5. Optimization of THz quantum cascade lasers with an active module based on two-quantum wells for high-temperature operation;Journal of Physics: Conference Series;2021-12-01