Precision AlGaAs Bragg reflectors fabricated by phase‐locked epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102890
Reference8 articles.
1. Multilayer GaAs-Al_03Ga_07As dielectric quarter wave stacks grown by molecular beam epitaxy
2. Surface emitting semiconductor lasers
3. Room‐temperature continuous‐wave vertical‐cavity surface‐emitting GaAs injection lasers
4. Characterization of GaAs/(GaAs)n(AlAs)msurface‐emitting laser structures through reflectivity and high‐resolution electron microscopy measurements
5. Phase-Locked Epitaxy Using RHEED Intensity Oscillation
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2. Estimating the Optical Thickness Errors in Vertical-Cavity Surface-Emitting Laser Structures from Optical Reflection Spectra;Japanese Journal of Applied Physics;2004-01-13
3. Optical microcavities with subnanometer linewidths based on porous silicon;Applied Physics Letters;2002-12-23
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5. Wide bandwidth AlAs/AlGaAs tandem Bragg reflectors grown by organometallic vapor phase epitaxy;Applied Physics Letters;1995-12-18
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