Mercury vacancy equilibria in Hg1−xCdxTe

Author:

Neubert M.,Jacobs K.,Krause‐Rehberg R.,Abgarjan Th.,Gille P.,Hoerstel W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Research progress on p-type doping mechanism and low frequency noise of long wave HgCdTe devices;SCIENTIA SINICA Physica, Mechanica & Astronomica;2021-01-13

2. Sources of carrier compensation in arsenic-doped HgCdTe;Journal of Physics and Chemistry of Solids;2013-01

3. Activation kinetics of the As acceptor in HgCdTe;Journal of Materials Science: Materials in Electronics;2007-04-21

4. Activation of arsenic in epitaxial Hg 1-x Cd x Te (MCT);SPIE Proceedings;2006-08-31

5. Defect structure in near–surface layer of CdHgTe crystals after low–energy Ar ion milling;Materials Science and Engineering: B;2004-12

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