Observation of 〈100〉 misfit dislocations in In0.06Ga0.94As/GaAs heterostructure by synchrotron radiation topography
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363012
Reference10 articles.
1. Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design
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4. Misfit dislocations lying along 〈100〉 in [001] GaAs/In0.25Ga0.75As/GaAs quantum well heterostructures
5. Observations of new misfit dislocation configurations and slip systems at ultrahigh stresses in the (Al)GaAs/InxGa1−xAs/GaAs(100) system
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