Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy-Reference-Cited by-同舟云学术

Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy

Published:2017-05-01 Issue:18 Volume:110 Page:182402
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ohshima Ryo¹,Klingler Stefan²³,Dushenko Sergey¹,Ando Yuichiro¹,Weiler Mathias²³,Huebl Hans²³⁴,Shinjo Teruya¹,Goennenwein Sebastian T. B.²³⁴^ORCID,Shiraishi Masashi¹

Affiliation:

1. Department of Electronic Science and Engineering, Kyoto University, 615-8510 Kyoto, Japan

2. Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching, Germany

3. Physik-Department, Technische Universität München, 85748 Garching, Germany

4. Nanosystems Initiative Munich, 80799 München, Germany

Funder

Ministry of Education, Culture, Sports, Science and Technology (MEXT)

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference28 articles.

1. Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor

2. Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem

3. Electronic measurement and control of spin transport in silicon

4. Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry

5. Electrical Spin Injection into Silicon Using MgO Tunnel Barrier

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