Effect of residual impurities on transport properties of β-FeSi2 epitaxial films grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4731246
Reference26 articles.
1. Semiconducting Silicides
2. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm
3. Photovoltaic characteristics of p-β-FeSi2(Al)/n-Si(100) heterojunction solar cells and the effects of interfacial engineering
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