Refractive indices of In0.49Ga0.51−xAlxP lattice matched to GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336581
Reference10 articles.
1. Molecular beam epitaxial growth of InGaAlP on (100) GaAs
2. 0.66 μm room-temperature operation of InGaAlP DH laser diodes grown by MBE
3. Yellow‐emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition
4. 626.2‐nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition
5. Refractive index of Ga1−xAlxAs
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