Growth of Al on GaAs(001): Observation of interfacial submonolayer structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102207
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1. The structure and properties of metal-semiconductor interfaces
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1. Observation of an abrupt 3D-2D morphological transition in thin Al layers grown by MBE on InGaAs surface;Journal of Vacuum Science & Technology A;2024-04-16
2. Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits;Superconductor Science and Technology;2016-04-22
3. Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces;Physical Review B;1992-06-15
4. Surface structure of selenium‐treated GaAs (001) studied by field ion scanning tunneling microscopy;Applied Physics Letters;1991-12-02
5. Growth of (100) Al/Fe and Fe/Al/Fe layers using the technique of metal‐metal epitaxy on silicon;Journal of Applied Physics;1990-12
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