Thickness-tuned magnetotransport properties of topological semimetal trigonal PtBi2

Author:

Zhu Ankang1ORCID,Wang Huanhuan1,Chen Zheng2,Han Yuyan2ORCID,Zhu Mengcheng1,Han Minglong1ORCID,Zhu Xiangde2,Gao Wenshuai1ORCID,Tian Mingliang23ORCID

Affiliation:

1. Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University 1 , Hefei 230601, China

2. Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences 2 , Hefei 230031, China

3. School of Physics and Optoelectronics Engineering, Anhui University 3 , Hefei 230601, China

Abstract

Here, we report systematic studies on thickness-dependent magnetotransport properties of trigonal layered PtBi2. When the thickness decreases, the metallicity is gradually suppressed, and it ultimately displays a semiconductor-like behavior when the thickness is reduced to 22 nm. Interestingly, the magnetoresistance (MR) decreases gradually as well as the thickness decreases, followed by an abrupt increase in the 22 nm nanoflake. The Hall resistance demonstrates the distinct evolution of an electronic state on thickness, revealing that the carrier compensation mechanism may play a role on the large MR in the 22 nm PtBi2 nanoflake. The scanning transmission electron microscopy image clearly uncovers the surface reconstruction of trigonal PtBi2, and qualitative interpretation is proposed for understanding the thickness-dependent transport properties. Our results provide insight into the electronic properties in the low-dimensional limit of topological semimetal trigonal PtBi2.

Funder

National Natural Science Foundation of China

Collaborative Innovation program of Hefei Science Center

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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