Oxidation-enhanced Si self-diffusion in isotopically modulated silicon nanopillars-Reference-Cited by-同舟云学术

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Oxidation-enhanced Si self-diffusion in isotopically modulated silicon nanopillars

Published:2020-01-31 Issue:4 Volume:127 Page:045704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kiga Ryotaro¹^ORCID,Hayashi Sayaka¹,Miyamoto Satoru¹,Shimizu Yasuo²^ORCID,Nagai Yasuyoshi²,Endoh Tetsuo³⁴,Itoh Kohei M.¹

Affiliation:

1. School of Fundamental Science and Technology, Keio University, Yokohama 223-8522, Japan

2. Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan

3. Center for Innovative Integrated Electronic Systems (CIES), Tohoku University, Sendai 980-0845, Japan

4. JST-ACCEL, Sendai 980-0845, Japan

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5134105

Reference31 articles.

1. Device scaling limits of Si MOSFETs and their application dependencies

2. Novel ultrahigh-density flash memory with a stacked-surrounding gate transistor (S-SGT) structured cell

3. Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET

4. Vertical Silicon-Nanowire Formation and Gate-All-Around MOSFET

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1. Synthesis, Processing, and Use of Isotopically Enriched Epitaxial Oxide Thin Films;Accounts of Materials Research;2024-08-08

2. Formation of Si nanopillars through partial sacrificing in super passivation reactive ion etching;Nanotechnology;2024-05-16

3. Directly resolving surface vs. lattice self-diffusion in iron at the nanoscale using in situ atom probe capabilities;Materialia;2024-05

4. Adatom-Driven Oxygen Intermixing during the Deposition of Oxide Thin Films by Molecular Beam Epitaxy;Nano Letters;2022-06-10

5. Retarded boron and phosphorus diffusion in silicon nanopillars due to stress induced vacancy injection;Journal of Applied Physics;2022-02-21

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