Electrically-inactive phosphorus re-distribution during low temperature annealing-Reference-Cited by-同舟云学术

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Electrically-inactive phosphorus re-distribution during low temperature annealing

Published:2018-04-28 Issue:16 Volume:123 Page:161535
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Peral Ana¹^ORCID,Youssef Amanda²,Dastgheib-Shirazi Amir³^ORCID,Akey Austin²,Peters Ian Marius²,Hahn Giso³,Buonassisi Tonio²,del Cañizo Carlos¹

Affiliation:

1. Universidad Politécnica de Madrid, E.T.S.I. de Telecomunicación, Instituto de Energía Solar, 28040 Madrid, Spain

2. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

3. Department of Physics, University of Konstanz, 78457 Konstanz, Germany

Funder

National Science Foundation

Ministerio de Economía y Competitividad

Consejería de Educación, Juventud y Deporte, Comunidad de Madrid

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5002627

Reference16 articles.

1. Physics of Semiconductor Devices

2. A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P

3. Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates

4. High concentration diffusivity and clustering of arsenic and phosphorus in silicon

5. High concentration in-diffusion of phosphorus in Si from a spray-on source

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Superior Phosphorous Doping in Nanocrystalline Silicon Thin Films and Their Application as Emitter Layers in Silicon Heterojunction Solar Cells;Energy & Fuels;2023-04-10

2. Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter;Journal of Materials Science: Materials in Electronics;2019-06-29

3. Phosphorus Diffusion Gettering Efficacy in Upgraded Metallurgical-Grade Solar Silicon;Journal of Electronic Materials;2018-05-11

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