Patterned heteroepitaxial processing applied to ZnSe and ZnS0.02Se0.98 on GaAs (001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1446227
Reference19 articles.
1. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
2. Lattice engineered compliant substrate for defect-free heteroepitaxial growth
3. The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si
4. Improvement in heteroepitaxial film quality by a novel substrate patterning geometry
5. Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dislocation Sidewall Gettering in II-VI Semiconductors and the Effect of Dislocation Pinning Interactions;Journal of Electronic Materials;2020-08-09
2. Substrates for the Epitaxial Growth of MCT;Mercury Cadmium Telluride;2010-09-04
3. Molecular-Beam Epitaxial Growth of HgCdTe;Springer Handbook of Crystal Growth;2010
4. Realization of very long wavelength infrared photovoltaic detector arrays on mercury cadmium telluride epitaxial layers grown on Si substrates;Journal of Electronic Materials;2006-11
5. ITO/Homoepitaxial ZnSe/ITO MSM Sensors With Thermal Annealing;IEEE Sensors Journal;2006-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3