Analysis of double injection transients in amorphous siliconp‐i‐ndiodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351575
Reference15 articles.
1. A comparison of single‐ and double‐carrier injection in amorphous silicon alloys
2. Dark current transport mechanism ofp‐i‐nhydrogenated amorphous silicon diodes
3. Transport and the electronic structure of hydrogenated amorphous silicon
4. Current-Voltage Characteristics-What Do Experiments Really Tell Us?
5. Light induced metastable defects in a-Si:H studied by transient space charge perturbed currents
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