Electron‐beam annealing of ion‐implantation damage in integrated‐circuit devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326163
Reference6 articles.
1. Spatially controlled crystal regrowth of ion‐implanted silicon by laser irradiation
2. A laser‐scanning apparatus for annealing of ion‐implantation damage in semiconductors
3. A laser‐scanning apparatus for annealing of ion‐implantation damage in semiconductors
4. Silicon solar cells by high-speed low-temperature processing
5. Pulsed‐electron‐beam annealing of ion‐implantation damage
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Transient annealing of semiconductors by laser, electron beam and radiant heating techniques;Reports on Progress in Physics;1985-08-01
2. Short Time Annealing;Journal of The Electrochemical Society;1983-02-01
3. Theoretical Analysis of Homogeneity and Surface Degradation During Pulsed Electron Beam Annealing of GaAs and InP;MRS Proceedings;1983
4. Pulsed x‐ray annealing of ion‐implanted silicon;Applied Physics Letters;1982-09
5. Annealing of implantation damage in integrated‐circuit devices using an incoherent light source;Journal of Vacuum Science and Technology;1982-01
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