Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe3O4 (110) films-Reference-Cited by-同舟云学术

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Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe3O4 (110) films

Published:2015-11-07 Issue:17 Volume:118 Page:173903
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sofin R. G. S.¹^ORCID,Wu Han-Chun²,Ramos R.³,Arora S. K.⁴,Shvets I. V.³

Affiliation:

1. Department of Physics, Sultan Qaboos University, Muscat 123, Oman

2. School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China

3. Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), School of Physics, Trinity College, Dublin 2, Ireland

4. Centre of Nano Science and Nano Technology, Panjab University, Sector-14, Chandigarh 160014, India

Funder

Science Foundation Ireland (SFI)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935157

Reference41 articles.

1. Orbital Physics in Transition-Metal Oxides

2. Chemical control of orbital polarization in artificially structured transition-metal oxides:La2NiXO6(X=B, Al, Ga, In)from first principles

3. Orbital-State-Mediated Phase-Control of Manganites

4. Strain control of orbital polarization and correlated metal-insulator transition in La2CoMnO6 from first principles

5. ANISOTROPIC MAGNETORESISTANCE IN PEROVSKITE MANGANITES

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Step-edge induced antiphase boundary density on the magnetoresistance behavior of epitaxial Fe3O4 thin films;Integrated Ferroelectrics;2018-11-22

2. X-ray photoelectron spectroscopy studies of Fe3O4 films on Si and MgO substrates grown by pulsed laser deposition;AIP Conference Proceedings;2018

3. Oxalic acid-assisted thermal treatment of iron film to fabricate magnetite and hematite microstructures: Synthesis, morphology and growth mechanism;Integrated Ferroelectrics;2017-06-13

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