Low temperature thermoelectric properties of p-type doped single-crystalline SnSe-Reference-Cited by-同舟云学术

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Low temperature thermoelectric properties of p-type doped single-crystalline SnSe

Published:2018-04-02 Issue:14 Volume:112 Page:142102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Si¹²^ORCID,Hui Si²,Peng Kunling³^ORCID,Bailey Trevor P.²^ORCID,Liu Wei¹,Yan Yonggao¹,Zhou Xiaoyuan³,Tang Xinfeng¹,Uher Ctirad²

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, China

2. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA

3. College of Physics, Chongqing University, Chongqing 401331, China

Funder

National Science Foundation

National Natural Science Foundation of China

China Scholarship Council

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5023125

Reference46 articles.

1. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals

2. Enhanced thermoelectric performance of SnSe doped with layered MoS 2 /graphene

3. Direct observation of vast off-stoichiometric defects in single crystalline SnSe

4. A Strategy for Low Thermal Conductivity and Enhanced Thermoelectric Performance in SnSe: Porous SnSe1–xSx Nanosheets

5. Single crystal growth of Sn 0.97 Ag 0.03 Se by a novel horizontal Bridgman method and its thermoelectric properties

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