Controlled improvement in specific contact resistivity for thermoelectric materials by ion implantation-Reference-Cited by-同舟云学术

Controlled improvement in specific contact resistivity for thermoelectric materials by ion implantation

Published:2013-07-22 Issue:4 Volume:103 Page:043902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Taylor Patrick J.,Maddux Jay R.,Meissner Greg,Venkatasubramanian Rama,Bulman Gary,Pierce Jonathan,Gupta Rahul,Bierschenk Jim,Caylor Chris,D’Angelo Jonathan,Ren Zhifeng

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4816054

Reference23 articles.

1. Measurement of Thermal Conductivity Using Steady-State Isothermal Conditions and Validation by Comparison with Thermoelectric Device Performance

2. V. Semenyuk, in IEEE Proceedings of the 20th International Conference on Thermoelectrics (2001), p. 391.

3. Determination of Contact Resistivity by the Cox and Strack Method for Metal Contacts to Bulk Bismuth Antimony Telluride

4. IV–VI device arrays: Microfabrication and specific contact resistivity

5. Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices

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