Temperature dependence of minority‐carrier lifetime in vapor‐grown GaP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.321855
Reference13 articles.
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5. A method for the determination of electron capture cross-section at imperfection centers in gallium arsenide of electroluminescent diodes
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1. Full-band-structure calculation of Shockley–Read–Hall recombination rates in InAs;Journal of Applied Physics;2001-07-15
2. Green and yellow light emitting diodes produced from vapour phase epitaxial GaP:N. II. Defects produced by 1 MeV proton irradiation;physica status solidi (a);1985-04-16
3. Degradation of green light emitting diodes LPE-GaP:N I. electron beam characterization and deep-level spectroscopy;Physica Status Solidi (a);1984-12-16
4. Green and Yellow Light Emitting Diodes Produced from Vapour Phase Epitaxial GaP:N. I. Deep Levels in Diodes Produced by either Diffusion or Implantation of Zinc;Physica Status Solidi (a);1984-10-16
5. Temperature dependence of the hole lifetime in n-type GaP;Solid State Communications;1984-10
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