Photoluminescence studies in CuInS2 thin films grown by sulfurization using ditertiarybutylsulfide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4771928
Reference62 articles.
1. Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells
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1. Photovoltaic characteristics and computational simulation of samarium-ion doped Cu(In, Ga)Se2 thin films prepared via a non-vacuum coating process;Journal of Alloys and Compounds;2021-11
2. Solution-processed Cu(In,Ga)(Se,S)2 solar cells prepared via a surface sulfurization process;Journal of the Taiwan Institute of Chemical Engineers;2020-05
3. Effects of the CuS phase on the growth and properties of CuInS2thin films;Japanese Journal of Applied Physics;2015-12-16
4. Controlling surface defects of non-stoichiometric copper-indium-sulfide quantum dots;Journal of Colloid and Interface Science;2015-12
5. Sub-Bandgap Emission and Intraband Defect-Related Excited-State Dynamics in Colloidal CuInS2/ZnS Quantum Dots Revealed by Femtosecond Pump–Dump–Probe Spectroscopy;The Journal of Physical Chemistry C;2014-10-07
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