InsituOhmic‐contact formation ton‐ andp‐GaAs by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90254
Reference12 articles.
1. Simple ohmic contacts on gallium arsenide
2. Low-temperature alloy contacts to gallium arsenide using metal halide fluxes
3. Specific contact resistance of ohmic contacts to gallium arsenide
4. Sintered ohmic contacts to n-and p-type GaAs
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1. Development of refractory ohmic contact materials for gallium arsenide compound semiconductors;Science and Technology of Advanced Materials;2002-01
2. Molecular Beam Epitaxy;Handbook of Thin Film Deposition Processes and Techniques;2001
3. Stoichiometry control and point defects in compound semiconductors;Materials Chemistry and Physics;2000-04
4. Low‐Resistance Contacts with Chemical Vapor Deposited Tungsten on GaAs Grown by Molecular Layer Epitaxy;Journal of The Electrochemical Society;1999-01-01
5. Germanium‐ and tellurium‐doped GaAs for non‐alloyed p‐type and n‐type ohmic contacts;Applied Physics Letters;1995-08-14
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