The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2424501
Reference20 articles.
1. Atomic-Scale Characterization of Nitridation Processes on Si(100)-2×1 Surfaces by Radical Nitrogen
2. Contribution of radicals and ions in atomic-order plasma nitridation of Si
3. Atomic-order thermal nitridation of Si(100) and subsequent growth of Si
4. Reaction pathways in remote plasma nitridation of ultrathin SiO[sub 2] films
5. X-ray absorption and photoelectron spectroscopic study of plasma-nitrided SiO2 film
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2. Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma;Journal of Applied Physics;2011-09-15
3. Nanostructured Materials in Different Dimensions for Sensing Applications;Nanotechnological Basis for Advanced Sensors;2011
4. Plasma nitridation of silicon by N2and NH3in PECVD reactor;Journal of Physics: Conference Series;2010-04-01
5. Self-focusing of a whistler propagating at an angle to the magnetic field in a plasma;Physica Scripta;2009-05-27
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