Gap states in the electronic structure of SnO2 single crystals and amorphous SnOx thin films-Reference-Cited by-同舟云学术

Gap states in the electronic structure of SnO2 single crystals and amorphous SnOx thin films

Published:2016-09-09 Issue:10 Volume:120 Page:105101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Haeberle J.¹,Machulik S.²,Janowitz C.²,Manzke R.²,Gaspar D.³,Barquinha P.³,Schmeißer D.¹

Affiliation:

1. Angewandte Physik Sensorik, Brandenburgische TU Cottbus, K.-Wachsmann-Allee 17, 03046 Cottbus, Germany

2. Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, 12489 Berlin, Germany

3. Department of Materials Science, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference48 articles.

1. Ambipolar Oxide Thin-Film Transistor

2. Gas-phase-dependent properties ofSnO2(110), (100), and (101) single-crystal surfaces: Structure, composition, and electronic properties

3. Band offsets, Schottky barrier heights, and their effects on electronic devices

4. The surface and materials science of tin oxide

5. Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

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