Electron confinement at diffuse ZnMgO/ZnO interfaces
Author:
Affiliation:
1. London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United Kingdom
2. Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973669
Reference17 articles.
1. Fundamentals of zinc oxide as a semiconductor
2. H. Morkoç and Ü. Özgür,General Properties of ZnO, in Zinc Oxide(Wiley-VCH Verlag GmbH & Co. KGaA., 2009), pp. 1–76.
3. MgZnO/ZnO heterostructures with electron mobility exceeding 1 × 106 cm2/Vs
4. Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy
5. MgxZn1−xO as a II–VI widegap semiconductor alloy
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1. Rapid Thermal Annealing for Surface Optimisation of ZnO Substrates for MBE-Grown Oxide Two-Dimensional Electron Gases;Crystals;2020-09-02
2. Carrier confinement at MgZnO/CdZnO heterojunction thin-film transistors;Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI;2019-09-03
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