Surface‐field‐induced tunnel junctions on InAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99896
Reference10 articles.
1. Millimeter‐band oscillations based on resonant tunneling in a double‐barrier diode at room temperature
2. Resonant tunneling transistor with quantum well base and high‐energy injection: A new negative differential resistance device
3. Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well
4. Tunneling and transverse wave vector conservation in GaAs/AlGaAs heterostructures
5. Frequency limit of double‐barrier resonant‐tunneling oscillators
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1. Monte Carlo calculation of electron drift characteristics and avalanche noise in bulk InAs;Journal of Applied Physics;2002-02
2. InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-03
3. Chapter 136 The intricate world of rare earth thin films: Metals, alloys, intermetallics, chemical compounds, …;Handbook on the Physics and Chemistry of Rare Earths Volume 20;1995
4. Resonant interband tunnelling in InSb electron inversion layers;Semiconductor Science and Technology;1993-05-01
5. Field-effect controlled resonant interband tunnelling in electron surface layers on InAs and In0.53Ga0.47As;Semiconductor Science and Technology;1993-01-01
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