Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se2 solar cells
Author:
Affiliation:
1. SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai, 200444, China
2. Instrumental Analysis & Research Center, Shanghai University, Shanghai, 200444, China
Funder
R&D Foundation of SHU-SOENs PV Joint Lab
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4961701
Reference36 articles.
1. Solar cell efficiency tables (Version 45)
2. Recombination in Cu(In,Ga)Se2 thin-film solar cells containing ordered vacancy compound phases
3. Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se2 heterojunction solar cells
4. Towards a CdS/Cu2ZnSnS4 solar cell efficiency improvement: A theoretical approach
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