Lateral-current confinement in a GaAs planar stripe-geometry and channeled substrate buried DH laser using reverse-biasedp-njunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325206
Reference28 articles.
1. Heterostructure injection lasers
2. HERMITE‐GAUSSIAN MODE PATTERNS IN GaAs JUNCTION LASERS
3. Very‐Low‐Current Operation of Mesa‐Stripe‐Geometry Double‐Heterostructure Injection Lasers
4. Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operation
5. GaAs–Ga1−xAlxAs buried‐heterostructure injection lasers
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1. Selective-area epitaxy and etching by chemical beam epitaxy;Semiconductor Science and Technology;1993-06-02
2. Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy;Electronics Letters;1991-01-03
3. Review of the Structures and Properties of Fabry–Perot Cavity Junction Lasers;Physics of Semiconductor Lasers;1991
4. A novel structure of visible semiconductor lasers;Optical and Quantum Electronics;1990-07
5. Terraced substrate inner stripe visible semiconductor laser and its arrays;IEEE Journal of Quantum Electronics;1990-03
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