Electrical field control of non-volatile 90° magnetization switching in epitaxial FeSi films on (001) 0.7[Pb(Mg1/3Nb2/3)O3]-0.3[PbTi0.3O3]-Reference-Cited by-同舟云学术

Electrical field control of non-volatile 90° magnetization switching in epitaxial FeSi films on (001) 0.7[Pb(Mg1/3Nb2/3)O3]-0.3[PbTi0.3O3]

Published:2016-01-25 Issue:4 Volume:108 Page:042403
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guo Xiaobin¹,Zuo Yalu¹,Li Dong¹,Cui Baoshan¹,Wu Kai¹,Yun Jijun¹,Wang Tao¹,Xi Li¹^ORCID

Affiliation:

1. Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Key Laboratory of Special Function Materials and Structure Design Ministry of Education, Lanzhou University, Lanzhou 730000, People's Republic of China

Funder

National Basic Research Program of China

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Gansu Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4940773

Reference27 articles.

1. Magnetic Domain-Wall Racetrack Memory

2. Magnetic Domain-Wall Logic

3. Evidence of a Symmetry-Dependent Metallic Barrier in Fully Epitaxial MgO Based Magnetic Tunnel Junctions

4. The vectorial control of magnetization by light

5. Spin-transfer effects in nanoscale magnetic tunnel junctions

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