A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4803032
Reference36 articles.
1. Electric Field Effect in Atomically Thin Carbon Films
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4. Single-Layer MoS2 Phototransistors
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