Annealing effect and under/capping layer study on Co/Ni multilayer thin films for domain wall motion
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4795720
Reference13 articles.
1. Current-induced domain-wall switching in a ferromagnetic semiconductor structure
2. Domain Wall Motion Induced by Electric Current in a Perpendicularly Magnetized Co/Ni Nano-Wire
3. Velocity of Domain-Wall Motion Induced by Electrical Current in the Ferromagnetic Semiconductor (Ga,Mn)As
4. Influence of Instabilities on High-Field Magnetic Domain Wall Velocity in (Co/Ni) Nanostrips
5. Large thermal stability independent of critical current of domain wall motion in Co/Ni nanowires with step pinning sites
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1. Investigation of Cap and Buffer Layer Effect in Co/Ni Thin Films by Ferromagnetic Resonance Technique;Karadeniz Fen Bilimleri Dergisi;2023-06-15
2. Influence of Cu insertion layer on magnetic property of [Co(0.3 nm)/Ni(0.6 nm)]10/Cu/[Co(0.3 nm)/Ni(0.6 nm)]10 spin valve thin films;Applied Physics A;2021-08-19
3. Tuning the perpendicular magnetic anisotropy of [Co(0.3nm)/Ni(0.6nm)]20 multilayer thin films;Thin Solid Films;2021-06
4. Modulated spin orbit torque in ultrathin ferromagnetic layer with different capping layers;Surface and Coatings Technology;2019-02
5. [Co/Ni] multilayers with robust post-annealing performance for spintronics device applications;Journal of Physics D: Applied Physics;2018-10-05
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