Layer- and barrier-dependent spin filtering effect and high tunnel magnetoresistance in FeCl2 based van der Waals junctions

Abstract

2D magnetic van der Waals (vdW) junctions have attracted intensive attention due to their easily controllable thickness and clear interface compared to conventional magnetic multilayer films, which provide a perfect platform to control the performance of spintronic devices. Herein, based on the experimentally fabricated FeCl2 flaks with interlayer antiferromagnetism and intralayer ferromagnetism, we explore the spin transport properties of two classes of vdW junctions with an Au electrode, Au/FeCl2/Au (FeCl2 as the tunnel barrier) and Au/FeCl2/barrier/FeCl2/Au (MoS2 or graphene as the tunnel barrier), and focus on the effects of different barriers and the number of layers. It is found that from monolayer to bilayer FeCl2 in Au/FeCl2/Au, the spin filtering effect is considerably increased due to the weakened interface effect, and almost complete spin polarized current can be obtained. For Au/FeCl2/MoS2/FeCl2/Au, whether the number of layers of MoS2 or FeCl2 is increased from monolayer to bilayer, the tunnel magnetoresistance (TMR) becomes higher due to the high spin polarization of FeCl2, which can reach 1 374 000%. The high TMR of 763 000% can also be achieved for Au/FeCl2/graphene/FeCl2/Au. This work suggests potential applications for FeCl2 flaks in 2D vdW spin filters and spin valves and will stimulate broad studies on layer- and barrier-controllable vdW spintronic devices. All calculations are performed by using the first-principles combined with non-equilibrium Green's function method.