On the role of spatial position of bridged oxygen atoms as surface passivants on the ground-state gap and photo-absorption spectrum of silicon nano-crystals-Reference-Cited by-同舟云学术

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On the role of spatial position of bridged oxygen atoms as surface passivants on the ground-state gap and photo-absorption spectrum of silicon nano-crystals

Published:2015-11-28 Issue:20 Volume:118 Page:205303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nazemi Sanaz¹^ORCID,Pourfath Mahdi¹²,Soleimani Ebrahim Asl¹,Kosina Hans²

Affiliation:

1. School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515, Iran

2. Institute for Microelectronics, Technische Universität Wien, Gusshausstrasse 27-29/E360, Wien A-1040, Austria

Funder

Vienna Scientific Cluster (VSC)

Iran National Science Foundation (INSF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936310

Reference41 articles.

1. Material considerations for terawatt level deployment of photovoltaics

2. Quantum confinement regime in silicon nanocrystals

3. Size‐dependent photoluminescence in silicon nanostructures: quantum confinement effect

4. Quantum confinement in Si and Ge nanostructures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiple Exciton Generation in SiGe Nanoclusters: A Numerical Study;physica status solidi (RRL) – Rapid Research Letters;2018-10-21

2. Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal;Applied Surface Science;2016-11

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