Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4720395
Reference13 articles.
1. Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method
2. Experimental and theoretical mobility of electrons in δ‐doped GaAs
3. Low‐pressure metalorganic chemical vapor deposition growth and characterization of δ‐doped InP
4. Delta-doping optimization for high quality p-type GaN
5. On the effect of periodic Mg distribution in GaN:δ-Mg
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