Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1436551
Reference5 articles.
1. EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy
2. Au/GaAs interface annealing study by positron-lifetime spectroscopy
3. Positron deep level transient spectroscopy — a new application of positron annihilation to semiconductor physics
4. Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect
5. A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs
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1. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017
2. Investigation of electric fields in B-implanted Si by positron beam spectroscopy;physica status solidi (c);2007-09
3. Positron beam studies of transients in semiconductors;Applied Surface Science;2006-02
4. A study of the electric field transient at the Au/semi-insulating GaAs contact under an alternating current square-pulse bias;Journal of Physics: Condensed Matter;2002-11-27
5. Experimental and Computational Characterization;Charged Semiconductor Defects
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