Ion channeling studies of epitaxial Fe and Co silicides on Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358007
Reference32 articles.
1. Epitaxy of metal silicides
2. Refractory silicides for integrated circuits
3. Realization and electrical properties of a monolithic metal-base transistor : The Si/CoSi2/Si structure
4. Control of a natural permeable CoSi2base transistor
5. Application of MBE-grown epitaxial Si/CoSi/sub 2//Si heterostructures for overgrown silicon permeable-base transistors
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1. Interpreting Mössbauer spectra reflecting an infinite number of sites: An application toFe1−xSisynthesized by pulsed laser annealing;Physical Review B;2006-11-08
2. Metastable iron silicide phase formation by pulsed laser annealing;Journal of Applied Physics;2004-03
3. Thermal reaction of iron with a Si(111) vicinal surface: Surface ordering and growth of CsCl-type iron silicide;Physical Review B;2003-05-05
4. Scanning tunneling microscopy and ion channeling studies of thin Co films on bromine-treated Si(100) surfaces;Applied Surface Science;2000-02
5. Analysis of Co and Cr dopants in epitaxial films of β-FeSi 2 by ERDA, RBS, EDX and AES;Fresenius' Journal of Analytical Chemistry;1999-09-08
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