Extended defects in ZnO: Efficient sinks for point defects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973463
Reference35 articles.
1. A comprehensive review of ZnO materials and devices
2. Origin ofp-type doping difficulty in ZnO: The impurity perspective
3. The microscopic origin of the doping limits in semiconductors and wide-gap materials and recent developments in overcoming these limits: a review
4. Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO
5. Ion-beam-produced structural defects in ZnO
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