Ni Schottky diodes on cubic GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2193401
Reference19 articles.
1. H. Morkoc and L. Liu, in Nitride Semiconductors—Handbook on Materials and Devices, edited by P. Ruterana, M. Albrecht, and J. Neugebauer (Wiley-VCH, Weinheim, 2003), p. 547.
2. SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors
3. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
4. Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
5. Analysis of current–voltage characteristics of inhomogeneous Schottky diodes at low temperatures
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2. Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes;Applied Physics Letters;2015-08-31
3. Capacitance Voltage Characteristics and Electron Holography on Cubic AlGaN/GaN Heterojunctions;Japanese Journal of Applied Physics;2013-08-01
4. Carbon doped asymmetric cubic AlN/GaN multi quantum well structures for high electrical isolation to 3C-SiC substrates;physica status solidi (c);2013-02-07
5. Free carrier accumulation at cubic AlGaN/GaN heterojunctions;Applied Physics Letters;2012-04-02
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