Gated Hall effect measurements in high‐mobility n‐type Si/SiGe modulation‐doped heterostructures-Reference-Cited by-同舟云学术

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Gated Hall effect measurements in high‐mobility n‐type Si/SiGe modulation‐doped heterostructures

Published:1995-02-13 Issue:7 Volume:66 Page:842-844
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ismail K.,Arafa M.,Stern Frank,Chu J. O.,Meyerson B. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113440

Reference12 articles.

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. The proximity effect of the regrowth interface on two-dimensional electron density in strained Si;Applied Physics Letters;2008-03-17

4. Electrothermal Monte Carlo Simulation of Submicrometer Si/SiGe MODFETs;IEEE Transactions on Electron Devices;2007-02

5. Ion beam mixing for processing of nanostructure materials;Journal of Electronic Materials;2006-05

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